MODELING AND INVESTIGATION OF THE INITIALLY CLOSED ALGAN HETEROJUNCTION FIELD-EFFECT TRANSISTOR
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Abstract
Gallium nitride (GaN) has many excellent physical properties: a wide band gap of 3,4 eV, a large critical breakdown field of 3,3 MV/cm, a high saturation velocity for electrons of 2,5 · 107 cm/s, and good thermal conductivity of up to 1,5 W/(cmK). These properties make GaN-based devices very promising for a wide range of applications in semiconductor devices, including high-speed and high-power electronics. In this work, using the COMSOL Multiphysics software, a model of an initially closed heterojunction field-effect transistor (HJFET) based on AlxGax-1N was developed, including its current-voltage characteristic (CVC) and other parameters.
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1. Куэй, Р. Электроника на основе нитрида галлия / Р. Куэй. – М. : Техно-сфера, 2011. – 587 с.
2. Zineeddine, T. Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications / T. Zineeddine, H. Zahra, M. Zitouni //J. of Sci. Adv. Mater. Devices. – 2019. – № 4. – P. 180–187.
3. Данлэп, У. Введение в физику полупроводников : пер. с англ. / У. Данлэп. – М. : Изд-во иностр. лит., 2011. – 430 c.
4. Исследование поляризаций нитридных соединений (Al, Ga, AlGa)N и зарядовой плотности различных интерфейсов на их основе / И. А. Супрядкина [и др.] // Физика и техника полупроводников. – 2013. – T. 47, № 12. – C. 1647–1652.
5. Gate leakage suppression and breakdown voltage enhancement in p-GaN GJT transistors using metal / graphene gates / G. Zhou [et al.] // IEEE Trans. Electron Devices. – 2019. – Vol. 67. – P. 875–880.
6. Нормально-закрытый транзистор с затвором p-типа на основе гетероструктур AlGaN / GaN / В. И. Егоркин [и др.] // Известия вузов. Электроника. – 2020. – Т. 25, № 5. – С. 391–401.
7. Development of UV image intensifier tube with GaN photocathode / I. Mizuno [et al.] // Proc. of SPIE. – 2008. – Vol. 6945. – P. 69451N-1 – 69451N-11.